Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Paper
Microscopic mechanisms of interface state generation by electrical stress
Abstract
Interface state generation by hot electrons is studied using spin-dependent recombination. Hot electrons with average energy {most positive}2eV produce a paramagnetic recombination center, while hole annihilation at the Si/SiO2 interface does not produce this defect. The implications of these results for microscopic models of interface defect creation are discussed. © 1993.
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