P. Ballone, W. Andreoni, et al.
EPL
Self-interstitials in Si are known to migrate athermally at very low temperatures (-4 K). In contrast, at hightemperatures (1100-1600 K), self-diffusion has an activation energy of -5 eV. We describe results of self-consistent Green's-function total energy calculations which, for the first time, provide detailed microscopic understanding of the mechanisms underlying these phenomena and reconcile the contrasting low- and high-temperature data. © 1984 Elsevier Science Ltd. All rights reserved.
P. Ballone, W. Andreoni, et al.
EPL
K. Laasonen, M. Sprik, et al.
The Journal of Chemical Physics
K. Laasonen, M. Parrinello, et al.
Chemical Physics Letters
R. Car, P.J. Kelly, et al.
ICPS Physics of Semiconductors 1984