MINORITY CARRIER TRANSPORT IN SILICON.

Time-of-flight measurements of the minority-carrier electron drift mobility in p-type silicon at room temperature are presented. It was found that the electron mobility at zero field is close to that in n-type silicon of equivalent doping density; however, it decreases rapidly with electric field in a range from 0-300 V/cm and more gradually at higher fields. This effect is attributed to electron-hole scattering.