J. Tersoff
Applied Surface Science
We apply a mixed-basis formulation of pseudopotential total-energy electronic structure calculations in the context of iterative diagonalization techniques. The formulation combines a small set of auxiliary functions to describe the localized part of the wave function with a plane-wave basis set. The method is tested on low-symmetry configurations of interstitial oxygen in silicon. This method provides accuracy comparable to plane-wave basis-set calculations and requires less computational effort. Therefore, it appears to be a promising tool for the description of the electronic structure of systems with localized valence electrons. © 1992 The American Physical Society.
J. Tersoff
Applied Surface Science
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990