C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Far-ultraviolet radiation (e.g. 185 nm from a mercury resonance lamp or 193 nm from a pulsed excimer laser) is highly effective in modifying the surfaces of a variety of polymers because of its short penetration depth (< 3000 A ̊) and its high (>0.1) quantum yield for bond breaking. With continuous low-level irradiation at 185 nm in the presence of specific gases functional groups can be introduced on the surface while etching is kept at a low rate. In contrast, the pulsed laser radiation at 193 nm causes ablative photodecomposition leading to a surface showing negligible reaction with the surrounding atmosphere. This process can be conveniently used in controlled etching of polymers.
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
T.N. Morgan
Semiconductor Science and Technology
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Lawrence Suchow, Norman R. Stemple
JES