G. Landgren, R. Ludeke, et al.
Journal of Crystal Growth
Epitaxial growth of alternating thin films of GaAs and Al was achieved on GaAs substrates of various orientations. In situ high-energy electron diffraction (HEED) analysis was used to monitor the molecular beam growth process. The following crystallographic relationship was observed: (100) GaAs on (110) Al on (100) GaAs substrates, with [110] GaAs parallel to [100] Al. An atomic interface model is proposed to explain the observed growth. © 1973 American Institute of Physics.
G. Landgren, R. Ludeke, et al.
Journal of Crystal Growth
D.N. McIlroy, D. Heskett, et al.
Physical Review B
J.C. Maan, Ch. Uihlein, et al.
Solid State Communications
H. Munekata, H. Ohno, et al.
Journal of Crystal Growth