L.L. Chang, L. Esaki
Applied Physics Letters
Epitaxial growth of alternating thin films of GaAs and Al was achieved on GaAs substrates of various orientations. In situ high-energy electron diffraction (HEED) analysis was used to monitor the molecular beam growth process. The following crystallographic relationship was observed: (100) GaAs on (110) Al on (100) GaAs substrates, with [110] GaAs parallel to [100] Al. An atomic interface model is proposed to explain the observed growth. © 1973 American Institute of Physics.
L.L. Chang, L. Esaki
Applied Physics Letters
D. Heitman, M. Ziesmann, et al.
Physical Review B
S. Washburn, R.A. Webb, et al.
Physical Review B
A. Koma, R. Ludeke
Physical Review Letters