L. Vina, E. Mendez, et al.
Journal of Physics C: Solid State Physics
Epitaxial growth of alternating thin films of GaAs and Al was achieved on GaAs substrates of various orientations. In situ high-energy electron diffraction (HEED) analysis was used to monitor the molecular beam growth process. The following crystallographic relationship was observed: (100) GaAs on (110) Al on (100) GaAs substrates, with [110] GaAs parallel to [100] Al. An atomic interface model is proposed to explain the observed growth. © 1973 American Institute of Physics.
L. Vina, E. Mendez, et al.
Journal of Physics C: Solid State Physics
L.L. Chang
NATO Advanced Study Institute 1984
Chin-An Chang, R. Ludeke, et al.
Applied Physics Letters
G. Bastard, L.L. Chang
Physical Review B