E. Mendez, L. Esaki, et al.
Physical Review B
Epitaxial growth of alternating thin films of GaAs and Al was achieved on GaAs substrates of various orientations. In situ high-energy electron diffraction (HEED) analysis was used to monitor the molecular beam growth process. The following crystallographic relationship was observed: (100) GaAs on (110) Al on (100) GaAs substrates, with [110] GaAs parallel to [100] Al. An atomic interface model is proposed to explain the observed growth. © 1973 American Institute of Physics.
E. Mendez, L. Esaki, et al.
Physical Review B
R. Ludeke, H.J. Wen, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
L. Esaki, P.J. Stiles, et al.
Physical Review Letters
D.D. Awschalom, J. Warnock, et al.
QELS 1989