E. Deleporte, J.M. Berroir, et al.
Physical Review B
Epitaxial growth of alternating thin films of GaAs and Al was achieved on GaAs substrates of various orientations. In situ high-energy electron diffraction (HEED) analysis was used to monitor the molecular beam growth process. The following crystallographic relationship was observed: (100) GaAs on (110) Al on (100) GaAs substrates, with [110] GaAs parallel to [100] Al. An atomic interface model is proposed to explain the observed growth. © 1973 American Institute of Physics.
E. Deleporte, J.M. Berroir, et al.
Physical Review B
H. Bluyssen, J.C. Maan, et al.
Solid State Communications
P. Manuel, G.A. Sai-Halasz, et al.
Physical Review Letters
S.C. Woronick, B.X. Yang, et al.
Journal of Applied Physics