Conference paper
Hole transport in p-channel Si MOSFETs
Santhosh Krishnan, Dragica Vasileska, et al.
Microelectronics Journal
By use of a Monte Carlo technique, it is shown that high-field electron transport in the SiO2 conduction band is controlled by LO-phonon scattering for fields below 3 × 106 V/cm and by nonpolar scattering with acoustic phonons at higher fields. This accounts for recent experimental results indicating that an energy-loss mechanism, previously neglected, is effective at high fields. © 1984 The American Physical Society.
Santhosh Krishnan, Dragica Vasileska, et al.
Microelectronics Journal
Sufi Zafar, Alessandro Callegari, et al.
Journal of Applied Physics
Massimo V. Fischetti, Steven E. Laux, et al.
IWCE 2004
Steven E. Laux, Arvind Kumar, et al.
IEEE TNANO