Conference paper
Doping effect on pairing symmetry in cuprate superconductors
C.C. Tsuei, J.R. Kirtley, et al.
SNS 2004
A field effect transistor fabricated with an oxide channel has been shown to demonstrate switching characteristics similar to conventional silicon metal oxide field effect transistors. This device is believed to operate via a Mott metal-insulator transition induced by the gate field, and offers a potential technology alternative for the regime beyond silicon scaling limitations. © 1998 American Institute of Physics.
C.C. Tsuei, J.R. Kirtley, et al.
SNS 2004
D.M. Newns, H.R. Krishnamurthy, et al.
Physical Review Letters
C.C. Tsuei, J.R. Kirtley
Reviews of Modern Physics
Joseph A. Stroscio, D.M. Newns, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films