C.C. Tsuei, D.M. Newns, et al.
Physical Review Letters
A field effect transistor fabricated with an oxide channel has been shown to demonstrate switching characteristics similar to conventional silicon metal oxide field effect transistors. This device is believed to operate via a Mott metal-insulator transition induced by the gate field, and offers a potential technology alternative for the regime beyond silicon scaling limitations. © 1998 American Institute of Physics.
C.C. Tsuei, D.M. Newns, et al.
Physical Review Letters
R. Beyers, G. Lim, et al.
Applied Physics Letters
A. Gupta, R. Gross, et al.
Physical Review Letters
R. Martel, J. Misewich, et al.
DRC 2004