A 5.5-GHz low noise amplifier in SiGe BiCMOS
Herschel A. Ainspan, Charles S. Webster, et al.
ESSCIRC 1998
Relaxation-type monolithic silicon bipolar voltagecontrolled oscillators (VCO’s) with center frequencies ranging from 1.5 to 5 GHz are described. The maximum oscillating frequency achieved is 7.4 GHz. The VCO’s dissipate about 70 mW from a 3.6-V supply, including the output buffer and voltage-to-current converter stages. Two types of on-chip timing capacitor structures and various configurations used in achieving these results are described. A wide tuning range has been achieved which is sufficient to cover the normal process tolerances and supply variations expected in a practical environment. The circuits are fabricated in an advanced 0.8-μm double-poly self-aligned bipolar technology. © 1992 IEEE
Herschel A. Ainspan, Charles S. Webster, et al.
ESSCIRC 1998
Joachim N. Burghartz, Jack Yuan-Chen Sun, et al.
IEEE T-ED
Ghavam G. Shahidi, Carl A. Anderson, et al.
IEEE Transactions on Electron Devices
James D. Warnock
IEEE Transactions on Electron Devices