True 3-D displays for avionics and mission crewstations
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Using high-resolution core-level spectroscopy we show that up to four different oxidation states of silicon coexist even at monolayer oxygen coverage. This observation precludes current models with a single adsorption geometry. Below 0.2 monolayer coverage, a single oxidation state is seen but the (100) surface has an oxygen-bonding geometry different from the (111) surface evidenced by different valence states and work-function changes. © 1983 The American Physical Society.
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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SPIE Advances in Semiconductors and Superconductors 1990
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures