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We report the fabrication of single-electron tunneling transistors consisting of a single nm-scale aluminum particle connected via tunnel junctions to two leads and capacitively coupled to a third gate electrode. We have used these devices to measure the spectra of discrete electronic quantum energy levels in the particle while tuning the number of electrons it contains. © 1996 Academic Press Limited.
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
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