Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
We report the fabrication of single-electron tunneling transistors consisting of a single nm-scale aluminum particle connected via tunnel junctions to two leads and capacitively coupled to a third gate electrode. We have used these devices to measure the spectra of discrete electronic quantum energy levels in the particle while tuning the number of electrons it contains. © 1996 Academic Press Limited.
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
T.N. Morgan
Semiconductor Science and Technology
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992