Nanoscale resistive memory device using SrTiO₃ films

Abstract

Resistive-oxide memory cells based on polycrystalline films of Cr-doped SrTiO3 have been investigated with regard to next-generation non-volatile memory. Crosspoint cells with an area of 200 × 200nm 2 show fast write and erase times (≤ 100ns), endure 105 programming cycles and can be programmed with low currents (< 100μA). The weak area dependence of the write and erase current give rise to desirable scaling properties. ©2007 IEEE.