M. Hargrove, S.W. Crowder, et al.
IEDM 1998
We present a theoretical investigation and discussion of N doping in ZnSe and ZnTe, based on first-principles calculations. We find that the experimentally observed trend in doping efficiency can be attributed to the higher solubility of N in ZnTe. We also discuss the potential formation of complexes between the N acceptor and native defects, the change in lattice constant of ZnSe due to heavy N doping, and some problems associated with N as an acceptor dopant. © 1995.
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
R. Ghez, M.B. Small
JES
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano