F.A. Houle, S. Raoux, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Non-thermal effects in laser-enchanced etching of silicon by XeF2
Abstract
Mass spectrometric studies of the products of the reaction of XeF2 with silicon in the dark and under visible illumination have been carried out. The data show that photo-enchancement of the reaction is substantially different from thermal enchancement. It is proposed that photogenerated charge carries influence strongly both the overall etch rate and the reaction product distribution. © 1983.
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