F.A. Houle, G.M. Poliskie, et al.
Microlithography 2000
Mass spectrometric studies of the products of the reaction of XeF2 with silicon in the dark and under visible illumination have been carried out. The data show that photo-enchancement of the reaction is substantially different from thermal enchancement. It is proposed that photogenerated charge carries influence strongly both the overall etch rate and the reaction product distribution. © 1983.
F.A. Houle, G.M. Poliskie, et al.
Microlithography 2000
F.A. Houle
Proceedings of SPIE 1989
F.A. Houle, S. Raoux, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
F.A. Houle
The Journal of Chemical Physics