Nondestructive depth profiling of carrier lifetimes in full silicon wafers

D. Guidotti; J.S. Batchelder; J.A. Van Vechten; A. Finkel

doi:10.1063/1.96764

Applied Physics Letters

Paper

01 Dec 1986

Nondestructive depth profiling of carrier lifetimes in full silicon wafers

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Abstract

We demonstrate for the first time that the phase shift associated with amplitude modulated, near band-edge photoluminescence from Si at room temperature can be used to map defects and carrier lifetimes over full wafers with depth sensitivity.

Paper

Consequences of anion vacancy nearest-neighbor hopping in III-V compound semiconductors: Drift in InP metal-insulator-semiconductor field-effect transistors

J.A. Van Vechten, J.F. Wager

Journal of Applied Physics

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Threshold for optically induced dislocation glide in GaAs-AlGaAs double heterostructures: Degradation via a new cooperative phenomenon?

B. Monemar, R.M. Potemski, et al.

Physical Review Letters

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V-6 A Method for the Prevention of the Formation of Dark-Line and Dark-Spot Defects in GaAlAs Double Heterostructure Lasers

J.A. Van Vechten, J.M. Blum, et al.

IEEE T-ED

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Variation of semiconductor band gaps with lattice temperature and with carrier temperature when these are not equal

J.A. Van Vechten, M. Wautelet

Physical Review B

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Abstract

Related

Consequences of anion vacancy nearest-neighbor hopping in III-V compound semiconductors: Drift in InP metal-insulator-semiconductor field-effect transistors

Threshold for optically induced dislocation glide in GaAs-AlGaAs double heterostructures: Degradation via a new cooperative phenomenon?

V-6 A Method for the Prevention of the Formation of Dark-Line and Dark-Spot Defects in GaAlAs Double Heterostructure Lasers

Variation of semiconductor band gaps with lattice temperature and with carrier temperature when these are not equal