D. Guidotti
Review of Progress in Quantitative Nondestructive Evaluation
We demonstrate for the first time that the phase shift associated with amplitude modulated, near band-edge photoluminescence from Si at room temperature can be used to map defects and carrier lifetimes over full wafers with depth sensitivity.
D. Guidotti
Review of Progress in Quantitative Nondestructive Evaluation
B. Monemar, R.M. Potemski, et al.
Physical Review Letters
J.A. Van Vechten
Physical Review B
M.A. Taubenblatt, J.S. Batchelder
SPIE Applications in Optical Science and Engineering 1992