J.A. Van Vechten, M. Wautelet
Physical Review B
We demonstrate for the first time that the phase shift associated with amplitude modulated, near band-edge photoluminescence from Si at room temperature can be used to map defects and carrier lifetimes over full wafers with depth sensitivity.
J.A. Van Vechten, M. Wautelet
Physical Review B
J.S. Batchelder, M.A. Taubenblatt
Applied Physics Letters
J.A. Van Vechten
Journal of Physics C: Solid State Physics
J.A. Van Vechten, J.M. Blum, et al.
IEEE T-ED