Mingyang Li, Tanja Graf, et al.
Physical Review Letters
Magnetic tunnel transistors are used to study spin-dependent hot electron transport in thin CoFe films and across CoFe/GaAs interfaces. The magnetocurrent observed when the orientation of a CoFe base layer moment is reversed relative to that of a CoFe emitter, is found to exhibit a pronounced nonmonotonic variation with electron energy. A model based on spin-dependent inelastic scattering in the CoFe base layer and strong electron scattering at the CoFe/GaAs interface, resulting in a broad electron angular distribution, can well account for the variation of the magnetocurrent in magnetic tunnel transistors with GaAs(001) and GaAs(111) collectors. © 2003 The American Physical Society.
Mingyang Li, Tanja Graf, et al.
Physical Review Letters
C. Martinez-Boubeta, Yari Ferrante, et al.
Applied Physics Letters
Li Gao, Xin Jiang, et al.
Applied Physics Letters
Luc Thomas, Rai Moriya, et al.
Science