Hyunsoo Yang, See-Hun Yang, et al.
Physical Review Letters
Magnetic tunnel transistors are used to study spin-dependent hot electron transport in thin CoFe films and across CoFe/GaAs interfaces. The magnetocurrent observed when the orientation of a CoFe base layer moment is reversed relative to that of a CoFe emitter, is found to exhibit a pronounced nonmonotonic variation with electron energy. A model based on spin-dependent inelastic scattering in the CoFe base layer and strong electron scattering at the CoFe/GaAs interface, resulting in a broad electron angular distribution, can well account for the variation of the magnetocurrent in magnetic tunnel transistors with GaAs(001) and GaAs(111) collectors. © 2003 The American Physical Society.
Hyunsoo Yang, See-Hun Yang, et al.
Physical Review Letters
E. Jal, Jeffrey B. Kortright, et al.
Applied Physics Letters
Xin Jiang, Luc Thomas, et al.
Nature Communications
Yuelei Zhao, Qi Song, et al.
Scientific Reports