P.J. Stiles, L.L. Chang, et al.
Applied Physics Letters
In the accompanying paper we have given evidence that pulsed laser annealing of Si does not involve normal thermal melting and recrystallization. Here we argue the importance of the electron-hole plasma produced by the laser to the annealing process. © 1979.
P.J. Stiles, L.L. Chang, et al.
Applied Physics Letters
J.A. Van Vechten, A. Compaan
Solid State Communications
R. Tsu, L. Esaki, et al.
Physical Review Letters
R. Tsu, L. Esaki
Applied Physics Letters