W.A. Westdorp, K.K. Shih, et al.
Japanese Journal of Applied Physics
In the accompanying paper we have given evidence that pulsed laser annealing of Si does not involve normal thermal melting and recrystallization. Here we argue the importance of the electron-hole plasma produced by the laser to the annealing process. © 1979.
W.A. Westdorp, K.K. Shih, et al.
Japanese Journal of Applied Physics
B. Monemar, R.M. Potemski, et al.
Physical Review Letters
J.H. Basson, J.A. Van Vechten
Physical Review B
J.A. Van Vechten
Physical Review B