P.N. Sanda, J.M. Warlaumont, et al.
Physical Review Letters
Raman scattering and optical transmission measurements have been made on chemically vapor-deposited Si-rich SiO2 films. The measurements show segregated regions of amorphous silicon in the as-deposited films. Annealing the films at 1150°C completely crystallizes the amorphous silicon. Annealing at lower temperatures produces films with both amorphous and crystalline regions.
P.N. Sanda, J.M. Warlaumont, et al.
Physical Review Letters
J.A. Kash, J.C. Tsang
physica status solidi (b)
D.J. Dimaria
Microelectronic Engineering
J.C. Tsang, J.A. Kash
Proceedings of SPIE 1989