S. Cova, C. Porta, et al.
ESSDERC 2000
Raman scattering and optical transmission measurements have been made on chemically vapor-deposited Si-rich SiO2 films. The measurements show segregated regions of amorphous silicon in the as-deposited films. Annealing the films at 1150°C completely crystallizes the amorphous silicon. Annealing at lower temperatures produces films with both amorphous and crystalline regions.
S. Cova, C. Porta, et al.
ESSDERC 2000
A. Hartstein, Z.A. Weinberg
Journal of Physics C: Solid State Physics
D.J. Dimaria, D.W. Dong
Applied Physics Letters
G.V.Subba Rao, J.C. Tsang
Materials Research Bulletin