Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
We report the experimental observation of impurity-induced conductance dips in quantized channels as predicted by previous theorical studies. Our experiments use quantum point contacts on a two-dimensional electron gas in a modulation-doped GaAs/AlGaAs heterostructure. The electron gas has a sheet density of 1.2 × 1011 cm-2 and a mobility of 4.6 × 105cm2/Vs, measured at 50 mK. Our data, which are qualitatively very similar to those calculated using a two-dimensional Anderson model, strongly suggest that we are observing both the erosion of conductance quantization, and localization in the presence of an impurity-induced random potential. © 1990.
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
R. Ghez, M.B. Small
JES