A.W. Kleinsasser, T.N. Jackson, et al.
Applied Physics Letters
An excess low-voltage conductance is observed in Nb-InGaAs contacts at low temperatures and interpreted as being due to a pair current across the superconductor-semiconductor interface. This is the first observation of a pair current, a nonequilibrium manifestation of the proximity effect, in junctions having one electrode which is not a superconductor. A model is presented which accounts for the observed behavior. In addition to the pair current, it is demonstrated that these junctions exhibit excess conductance due to Andreev scattering. © 1991 The American Physical Society.
A.W. Kleinsasser, T.N. Jackson, et al.
Applied Physics Letters
R.B. Laibowitz, R.P. Robertazzi, et al.
Physical Review B
V. Foglietti, W.J. Gallagher, et al.
Applied Physics Letters
M.B. Ketchen, D.J. Pearson, et al.
Applied Physics Letters