Conference paper
New preamorphization technique for very shallow p+-n junctions
B. Davari, E. Ganin, et al.
VLSI Technology 1989
The semiconductor-semimetal transition in InAs-GaSb superlattices is observed at a layer thickness in the vicinity of 100 Å. The transition manifests itself in an increase in the measured carrier concentration as a result of electron transfer from GaSb to InAs when ground subbands of electrons and heavy holes cross each other. Shubnikov-de Haas measurements confirm the carrier enhancement in the semimetallic state.
B. Davari, E. Ganin, et al.
VLSI Technology 1989
L. Esaki, L.L. Chang
Physical Review Letters
L.M. Claessen, J.C. Maan, et al.
Physical Review Letters
E. Mendez, G. Bastard, et al.
Physical Review B