Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Angle-resolved photoelectron spectroscopy and k-resolved inverse photoemission have been used to study the electronic structure of the Si(100)×1 surface. For both techniques, one occupied and one unoccupied surface-state band has been mapped along the [010] and [011] directions. The surface shows semiconducting behavior with an estimated minimum band gap of 1.45 eV along the [010] direction. © 1993 The American Physical Society.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
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