Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Angle-resolved photoelectron spectroscopy and k-resolved inverse photoemission have been used to study the electronic structure of the Si(100)×1 surface. For both techniques, one occupied and one unoccupied surface-state band has been mapped along the [010] and [011] directions. The surface shows semiconducting behavior with an estimated minimum band gap of 1.45 eV along the [010] direction. © 1993 The American Physical Society.
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME