PaperDiffusion of boron, phosphorus, and arsenic implanted in thin films of cobalt disilicideO. Thomas, P. Gas, et al.Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperDopant redistribution during oxidation of SiGeF.K. LeGoues, R. Rosenberg, et al.Applied Physics Letters
Conference paperCHARACTERIZATION OF IC DEVICES FABRICATED IN LOW TEMPERATURE (550 degree C) EPITAXY BY UHV/CVD TECHNIQUE.T.N. Nguyen, D.L. Harame, et al.IEDM 1985
ReviewSurface morphology and alloy ordering in epitaxial growth of SiGeF.K. LeGoues, J. Tersoff, et al.Physical Review Letters