PaperMedium-energy-ion-scattering investigations of Si and Ge growth on GaAs(001)-c(2×8)/(2×4)J. Falta, M. Copel, et al.Physical Review B
PaperStrain relaxation in ultrathin epitaxial films of β-FeSi2 on unstrained and strained Si(100) surfacesD.R. Peale, R. Haight, et al.Thin Solid Films