Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Paper
On the mechanism of diffusion-induced boundary migration
Abstract
A grain-boundary-dislocation mechanism for diffusion-induced boundary migration is proposed. It is suggested that point-defect emission from grain-boundary dislocations is necessary for the solution and transport of substitutional solutes. Grain-boundary migration occurs as a by-product of the emission of point defects, owing to the requirement that the dislocation remain in the grain-boundary plane. © 1981 Taylor & Francis Group, LLC.