Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
A grain-boundary-dislocation mechanism for diffusion-induced boundary migration is proposed. It is suggested that point-defect emission from grain-boundary dislocations is necessary for the solution and transport of substitutional solutes. Grain-boundary migration occurs as a by-product of the emission of point defects, owing to the requirement that the dislocation remain in the grain-boundary plane. © 1981 Taylor & Francis Group, LLC.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Ronald Troutman
Synthetic Metals
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
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EMC 2011