J.A. Brum, L.L. Chang, et al.
Physical Review B
The cleaved edge of a GaAlSb/InAs/GaAlSb heterostructure contains a surface channel of accumulated electrons with the channel width given by the thickness of the InAs well. We achieved such structures and studied the temperature and magnetic-field dependence of the resistance along this edge. A strong negative magnetoresistance and well defined conductance fluctuations were observed, which were interpreted consistently by one-dimensional electron conduction. © 1992 The Japan Society of Applied Physics.
J.A. Brum, L.L. Chang, et al.
Physical Review B
Alex Harwit, C. Hsu, et al.
Applied Physics Letters
L.L. Chang, E. Mendez, et al.
ICPS Physics of Semiconductors 1984
H. Clemens, P. Ofner, et al.
Materials Letters