Conference paper
Magnetic manifestations of carrier localization in quantum well
D.D. Awschalom, J. Warnock, et al.
QELS 1989
The cleaved edge of a GaAlSb/InAs/GaAlSb heterostructure contains a surface channel of accumulated electrons with the channel width given by the thickness of the InAs well. We achieved such structures and studied the temperature and magnetic-field dependence of the resistance along this edge. A strong negative magnetoresistance and well defined conductance fluctuations were observed, which were interpreted consistently by one-dimensional electron conduction. © 1992 The Japan Society of Applied Physics.
D.D. Awschalom, J. Warnock, et al.
QELS 1989
L. Esaki, L. Vina, et al.
Journal of Luminescence
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Physical Review B
T.P. Smith III, H. Munekata, et al.
Surface Science