L. Viña, F. Calle, et al.
Solid State Communications
The cleaved edge of a GaAlSb/InAs/GaAlSb heterostructure contains a surface channel of accumulated electrons with the channel width given by the thickness of the InAs well. We achieved such structures and studied the temperature and magnetic-field dependence of the resistance along this edge. A strong negative magnetoresistance and well defined conductance fluctuations were observed, which were interpreted consistently by one-dimensional electron conduction. © 1992 The Japan Society of Applied Physics.
L. Viña, F. Calle, et al.
Solid State Communications
T. Schmidt, A.G.M. Jansen, et al.
Physical Review Letters
J. Beerens, G. Grégoris, et al.
Physical Review B
R.J. Haug, J.M. Hong, et al.
Surface Science