Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Paper
Optical absorption of In1-xGaxAsGaSb1-yAsy superlattices
Abstract
The formation of subbands in In1-xGaxAsGaSb1-yAsy superlattices has resulted in entirely different absorption characteristics from those of the host semiconductors. The measured absorption edges agree with the calculated energy gaps of the superlattices of various configurations, establishing that the conduction bandedge of InAs lies approximately 0.15eV below the valence bandedge of GaSb. © 1978.
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