A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
The formation of subbands in In1-xGaxAsGaSb1-yAsy superlattices has resulted in entirely different absorption characteristics from those of the host semiconductors. The measured absorption edges agree with the calculated energy gaps of the superlattices of various configurations, establishing that the conduction bandedge of InAs lies approximately 0.15eV below the valence bandedge of GaSb. © 1978.
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting