F.E. Doany, D. Grischkowsky, et al.
TMPEO 1986
Using a source of freely propagating subpicosecond pulses of THz radiation, we have measured the absorption and dispersion of both N- and P-type, 1 Ω cm silicon from 0.1 to 2 THz. These results give the corresponding frequency-dependent complex conductance over the widest frequency range to date. The data provide a complete view on the dynamics of both electrons and holes and are well fit by the simple Drude relationship.
F.E. Doany, D. Grischkowsky, et al.
TMPEO 1986
B. Fan, Allen Lurio, et al.
Physical Review Letters
Joshua E. Rothenberg, D. Grischkowsky
Physical Review Letters
D. Grischkowsky
Physical Review Letters