William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
The valence subband dispersion of GaAs/AlGaAs quantum wells, including warping, is measured with meV accuracy using the radiative recombination of hot electrons at neutral acceptors. The measurements are shown to be in excellent agreement with k · p calculations. Differences in calculated dispersions from using various sets of Luttinger parameters proposed in the literature are discussed. © 1994.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Frank Stem
C R C Critical Reviews in Solid State Sciences
Ming L. Yu
Physical Review B
H.D. Dulman, R.H. Pantell, et al.
Physical Review B