R. Ghez, M.B. Small
JES
The valence subband dispersion of GaAs/AlGaAs quantum wells, including warping, is measured with meV accuracy using the radiative recombination of hot electrons at neutral acceptors. The measurements are shown to be in excellent agreement with k · p calculations. Differences in calculated dispersions from using various sets of Luttinger parameters proposed in the literature are discussed. © 1994.
R. Ghez, M.B. Small
JES
J. Tersoff
Applied Surface Science
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials