William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
The valence subband dispersion of GaAs/AlGaAs quantum wells, including warping, is measured with meV accuracy using the radiative recombination of hot electrons at neutral acceptors. The measurements are shown to be in excellent agreement with k · p calculations. Differences in calculated dispersions from using various sets of Luttinger parameters proposed in the literature are discussed. © 1994.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
J.C. Marinace
JES
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
A. Krol, C.J. Sher, et al.
Surface Science