G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
The valence subband dispersion of GaAs/AlGaAs quantum wells, including warping, is measured with meV accuracy using the radiative recombination of hot electrons at neutral acceptors. The measurements are shown to be in excellent agreement with k · p calculations. Differences in calculated dispersions from using various sets of Luttinger parameters proposed in the literature are discussed. © 1994.
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Ellen J. Yoffa, David Adler
Physical Review B
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT