Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
The observation of discrete pair line emission and the analysis of the spectra from Ge donor - C acceptor and S donor - Ge acceptor pairs in GaP is reported. The Ge donor binding energy is 0.200 ± 0.002 eV and the Ge acceptor binding energy is 0.258 ± 0.002 eV. The bound exciton recombination at neutral Ge donors was observed at 2.265 eV corresponding to an exciton binding energy of 0.063 eV. This is the most tightly donor bound exciton observed in GaP. © 1972.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry