Optimizing fabrication of buried oxide channel field effect transistors

Abstract

In this paper we describe improved methods of fabrication for an oxide channel field effect transistor (OxFET) similar in architecture to a conventional FET. We demonstrate that a substrate treatment consisting of a low power oxygen ashing followed by annealing yields a strontium (A-site) terminated surface in single-crystal strontium titanate (STO). This surface termination of the substrate results in pulsed laser deposited cuprate-channel films of improved quality.