E. Burstein
Ferroelectrics
We report high resolution x-ray diffraction measurements of relaxed Si0.7Ge0.3 layers on (001) Si substrates. Strain was relieved either by a glide-limited mechanism in structures where the composition was changed abruptly or by a nucleation-limited mechanism in structures having a compositionally graded intermediate layer. We find that the broadening of the x-ray peak of the surface alloy layer is similar in both types of samples, although the threading dislocation densities ranged from 1011 cm-2 to 5×106 cm-2. The effect of the threading dislocations is masked by the mosaic structure caused by the network of misfit dislocations underneath the layer.
E. Burstein
Ferroelectrics
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Ronald Troutman
Synthetic Metals