Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
The oxidation of ultra high-vacuum-cleaved GaAs(110) surfaces has been studied with high-resolution, core-level photoemission excited with synchrotron radiation. The oxidation is spatially and chemically inhomogeneous, and both subsurface oxidation and multibonding geometries occur already at submonolayer coverages. © 1984 The American Physical Society.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000