Julien Autebert, Aditya Kashyap, et al.
Langmuir
Paper
Oxidation of GaAs(110): New results and models
Abstract
The oxidation of ultra high-vacuum-cleaved GaAs(110) surfaces has been studied with high-resolution, core-level photoemission excited with synchrotron radiation. The oxidation is spatially and chemically inhomogeneous, and both subsurface oxidation and multibonding geometries occur already at submonolayer coverages. © 1984 The American Physical Society.
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