Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Paper
Oxygen interaction with defects at the Si/SiO2 interface
Abstract
Using 17O-enriched thermal oxide on silicon, we have measured the hyperfine interaction between dangling bonds at the (111) interface (Pb centers) and oxygen. Our analysis shows that the Pb center interacts with a single oxygen atom in the SiO2. © 1991.
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