Persistent photoconductivity in AlGaAs/GaAs modulation doped layers and field effect transistors: A review

Marshall I. Nathan

doi:10.1016/0038-1101(86)90035-3

Solid-State Electronics

Paper

01 Jan 1986

Persistent photoconductivity in AlGaAs/GaAs modulation doped layers and field effect transistors: A review

View publication

Abstract

The phenomenon of persistent photoconductivity in AlGaAs/GaAs modulation-doped layers and transistors is reviewed. Experimental observations, mechanisms which are responsible for it and structures for its elimination are discussed. © 1986.

Paper

Directed assembly of lamellae-forming block copolymers by using chemically and topographically patterned substrates

Sang-Min Park, Mark P. Stoykovich, et al.

Advanced Materials

Paper

On Fitting Error Functions to Data

R. Ghez, M.B. Small

JES

Paper

Michael Hatzakis, semiconductor industry pioneer

J. Paraszczak, J.M. Shaw, et al.

Micro and Nano Engineering

Conference paper

Self-assembling materials for lithographic patterning: Overview, status and moving forward

William Hinsberg, Joy Cheng, et al.

SPIE Advanced Lithography 2010

View all publications

Abstract

Related

Directed assembly of lamellae-forming block copolymers by using chemically and topographically patterned substrates

On Fitting Error Functions to Data

Michael Hatzakis, semiconductor industry pioneer

Self-assembling materials for lithographic patterning: Overview, status and moving forward