R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
The phenomenon of persistent photoconductivity in AlGaAs/GaAs modulation-doped layers and transistors is reviewed. Experimental observations, mechanisms which are responsible for it and structures for its elimination are discussed. © 1986.
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
A. Reisman, M. Berkenblit, et al.
JES
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
David B. Mitzi
Journal of Materials Chemistry