Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Differential thermal analysis and x-ray methods have been used to characterize the InSb-InSe pseudobinary phase diagram. A monotectic exists at 591°C and 91 mole % InSe, and the composition of the InSb rich melt at the monotectic temperature is 13 mole % InSe. A eutectic occurs at 519°C and 3 mole % InSe and two other phase transitions at 492°C and 460°C were present in the system. The solubility of InSe in InSb is less than 1% and less than 1% of InSb is soluble in InSe. © 1966, The Electrochemical Society, Inc. All rights reserved.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
R.W. Gammon, E. Courtens, et al.
Physical Review B
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001