E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
We present a high-resolution x-ray-scattering study of the temperature-dependent structure of Si(111) vicinally miscut by 4°along the 110 direction. At temperatures below 1159 K, the surface phase separates into flat 7×7 terraces and densely stepped regions, in agreement with previous reports. The angle between the phase-separated regions shows a temperature dependence consistent with both entropic and strain-induced step-step repulsive interactions. At temperatures above 1159 K, the surface is shown to exist as a single, logarithmically rough phase; the observed scattering line shapes demonstrate the presence of a long-range step-step repulsion of a magnitude comparable to the entropic repulsion. © 1995 The American Physical Society.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
P.C. Pattnaik, D.M. Newns
Physical Review B
K.N. Tu
Materials Science and Engineering: A
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids