Phenomena produced by ion bombardment in plasma-assisted etching environments

Harold F. Winters

doi:10.1116/1.575225

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Paper

01 Jan 1988

Phenomena produced by ion bombardment in plasma-assisted etching environments

View publication

Abstract

The emphasis of this review paper will be to summarize recent experimental results, describe and evaluate contemporary concepts in the etching field, and to provide references to recent work. © 1988, American Vacuum Society. All rights reserved.

Paper

Silylation of resist materials using di- and polyfunctional organosilicon compounds

E. Babich, J. Paraszczak, et al.

Microelectronic Engineering

Conference paper

Modeling polarization for Hyper-NA lithography tools and masks

Kafai Lai, Alan E. Rosenbluth, et al.

SPIE Advanced Lithography 2007

Paper

Synthesis of 1,2,4-Triazole Poly(aryl ethers) via Heterocyclic-Activated Displacement Polymerization

Kenneth R. Carter, Robert D. Miller, et al.

Macromolecules

Conference paper

Characterization of thin dielectric films as copper diffusion barriers using triangular voltage sweep

S. Cohen, J.C. Liu, et al.

MRS Spring Meeting 1999

View all publications

Abstract

Related

Silylation of resist materials using di- and polyfunctional organosilicon compounds

Modeling polarization for Hyper-NA lithography tools and masks

Synthesis of 1,2,4-Triazole Poly(aryl ethers) via Heterocyclic-Activated Displacement Polymerization

Characterization of thin dielectric films as copper diffusion barriers using triangular voltage sweep