R. Srinivasan, Lloyd S. White, et al.
JACS
Paper
Photo-oxidation of silicon monoxide to silicon dioxide with pulsed far-ultraviolet (193 nm) laser radiation
Abstract
Silicon monoxide films (1000-5000 Å thick) are converted to silicon dioxide when irradiated in air with pulses (∼15 n half-width) of 193-nm radiation (40-110 mJ/cm2) from an excimer laser. The quantum efficiency of the process has a minimum value of 0.014.
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