Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
An analytical model for trapping-state photodepopulation measurements in conductor-thin-film-insulator-conductor structures is presented. The external-circuit-current dependence on applied voltage is determined, and it is shown that moments of the spatial distribution of trapped charge in the insulator can be extracted from collected-charge versus applied-field characteristic curves. The photodepopulation technique is compared with more widely used differential-capacitance and phtoemission-current techniques. © 1974 The American Physical Society.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
Ellen J. Yoffa, David Adler
Physical Review B
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011