K.Z. Zhang, J.N. Greeley, et al.
Journal of Applied Physics
Hydrogenation of the silicon/silicon oxide interface is shown to cause changes in every feature spectroscopically discernible by soft x-ray photoemission in addition to depinning the Fermi level. A new feature is observed to grow in at 3.6 eV with respect to bulk Si upon exposure to atomic hydrogen at the expense of interface states intermediate between 3.6 and 0 eV. Assignments of photoemission features are discussed in the context of previous model studies of the interface and issues of electronic versus chemical reversibility are discussed. © 1996 American Institute of Physics.
K.Z. Zhang, J.N. Greeley, et al.
Journal of Applied Physics
Sunghee Lee, Mark M. Banaszak Holl, et al.
Applied Physics Letters
Kenneth T. Nicholson, Kangzhan Zhang, et al.
Langmuir
Mark M. Banaszak Holl, Sunghee Lee, et al.
Applied Physics Letters