T. Hashizume, R.J. Hamers, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
A saturation surface photovoltage is found to occur during ultraviolet photoemission at low temperatures (T20 K) on a variety of silicon (111) surfaces. Below 50 K surface recombination becomes ineffective thereby allowing flat-band conditions to be achieved with mild uv irradiation. Temperature-dependent photoemission thereby provides a simple and direct method for determining band bending and barrier heights. Results for different silicon (111) surfaces and preparation conditions are discussed. © 1986 The American Physical Society.
T. Hashizume, R.J. Hamers, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
J.E. Demuth, N.J. Dinardo, et al.
Physical Review Letters
R.J. Hamers, J.E. Demuth
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
J. Schneir, R. Sonnenfeld, et al.
Journal of Applied Physics