I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Photoluminescence at 5K is used to measure the radiative recombination in a potential solar cell material -- polycrystalline GaAs. In some samples the elecron-hole pair recombination is extremely efficient, yielding luminescence intensities up to 40% of that of monocrystalline GaAs. These samples are characterized by a peak at approximately 1.49eV, which is similar to that observed in the monocrystalline GaAs. However in other samples a broad, less intense band at approximately 1.47eV is seen. © 1979 AIME.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry