Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Quantitative experimental results are reported for the optical, electrical, and crystallographic properties of the layered dichalcogenide TiS2. A new method, utilizing a combination of titanium sputtering and reaction with H2S at low temperatures, was used to synthesize this group-IV transition-metal dichalcogenide. Both the electrical data and results of optical studies support the semimetal picture as opposed to the semiconducting model. © 1976 The American Physical Society.
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007