J.M. Liu, R. Yen, et al.
Applied Physics Letters
Ultrafast melting and resolidification on the surface of a silicon crystal has been induced by picosecond laser pulses at 532 and 266 nm. Optical microscopy and electron diffraction revealed the formation of amorphous silicon. Details of surface morphology are sensitive functions of pulse intensity, energy, wavelength, and crystallographic orientation.
J.M. Liu, R. Yen, et al.
Applied Physics Letters
J.M. Liu, R. Yen, et al.
Applied Physics Letters
J.J. Wynne, N. Bloembergen
Physical Review
Eli Yablonovitch, N. Bloembergen, et al.
Physical Review B