Donald Samuels, Ian Stobert
SPIE Photomask Technology + EUV Lithography 2007
The performance of devices and circuits is advancing at a rapid pace with the advent of submicron design ground rules and switching times under 50 ps. The requirements for probing the internal nodes of these ultra-fast, -small, and -dense circuits give rise to great challenges for high-speed electron-beam testing. In this paper, we review the steps which have allowed electron-beam testing to achieve simultaneously 5-ps temporal resolution, 0.1-μm spot size, and 3 mV/√Hz voltage sensitivity. The resulting newly developed instrument, called the picosecond photoelectron scanning electron microscope (PPSEM), is capable of measuring the state-of-the-art bipolar and FET circuits and also VLSI passive interconnects.
Donald Samuels, Ian Stobert
SPIE Photomask Technology + EUV Lithography 2007
John M. Boyer, Charles F. Wiecha
DocEng 2009
Raymond F. Boyce, Donald D. Chamberlin, et al.
CACM
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007