Victor Valls, Panagiotis Promponas, et al.
IEEE Communications Magazine
The performance of devices and circuits is advancing at a rapid pace with the advent of submicron design ground rules and switching times under 50 ps. The requirements for probing the internal nodes of these ultra-fast, -small, and -dense circuits give rise to great challenges for high-speed electron-beam testing. In this paper, we review the steps which have allowed electron-beam testing to achieve simultaneously 5-ps temporal resolution, 0.1-μm spot size, and 3 mV/√Hz voltage sensitivity. The resulting newly developed instrument, called the picosecond photoelectron scanning electron microscope (PPSEM), is capable of measuring the state-of-the-art bipolar and FET circuits and also VLSI passive interconnects.
Victor Valls, Panagiotis Promponas, et al.
IEEE Communications Magazine
Xinyi Su, Guangyu He, et al.
Dianli Xitong Zidonghua/Automation of Electric Power Systems
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Charles H. Bennett, Aram W. Harrow, et al.
IEEE Trans. Inf. Theory