Fan Zhang, Junwei Cao, et al.
IEEE TETC
The performance of devices and circuits is advancing at a rapid pace with the advent of submicron design ground rules and switching times under 50 ps. The requirements for probing the internal nodes of these ultra-fast, -small, and -dense circuits give rise to great challenges for high-speed electron-beam testing. In this paper, we review the steps which have allowed electron-beam testing to achieve simultaneously 5-ps temporal resolution, 0.1-μm spot size, and 3 mV/√Hz voltage sensitivity. The resulting newly developed instrument, called the picosecond photoelectron scanning electron microscope (PPSEM), is capable of measuring the state-of-the-art bipolar and FET circuits and also VLSI passive interconnects.
Fan Zhang, Junwei Cao, et al.
IEEE TETC
Preeti Malakar, Thomas George, et al.
SC 2012
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Robert E. Donovan
INTERSPEECH - Eurospeech 2001