Philip A. Saunders, J.F. Ziegler
Nuclear Instruments and Methods In Physics Research
In aiming at an electronic superlattice, epitaxial structures consisting of alternating layers of GaAs and GaAlAs have been grown by molecular-beam evaporation. The technique of He-ion backscattering provides a unique method for the direct and non-destructive profiling of these structures for superlattice layers of a few hundred angstroms if detailed account is made of the backscattering process. The results of Raman spectroscopy and scanning electron microscopy are shown also to furnish complementary information on compositions and thicknesses, respectively. The three techniques give similar results. © 1973 American Institute of Physics.
Philip A. Saunders, J.F. Ziegler
Nuclear Instruments and Methods In Physics Research
J.F. Ziegler, M.H. Brodsky
Journal of Applied Physics
Yia-Chung Chang, L.L. Chang, et al.
Applied Physics Letters
E. Mendez, L.L. Chang, et al.
Physical Review Letters