G.B. Street, H. Arnal, et al.
Materials Research Bulletin
Rectifying barriers of undoped and lightly doped trans-(CH)x films with low work function metals have been investigated. I-V and C-V measurements were used to explore the junction properties. The junction characteristics were found to be Schottky-like in the large sense accompanied by significant differences in detail. Using C-V measurements to determine the carrier concentration, we found the carrier mobility to be concentration dependent.
G.B. Street, H. Arnal, et al.
Materials Research Bulletin
R.L. Greene, P.M. Grant, et al.
Physical Review Letters
P.M. Grant, R.L. Greene, et al.
Physical Review Letters
M.E. López-Morales, R.J. Savoy, et al.
Journal of Materials Research