K.K. Shih, M.E. Re, et al.
Applied Physics Letters
The structure and properties of NiFe-N films, prepared by rf reactive sputtering process using nitrogen in the range from 0 to 40% in the nitrogen-argon gas mixture during sputtering, have been studied. The concentration of nitrogen and the resistivity of the NiFe-N films were determined as a function of nitrogen partial pressure. Films with good soft magnetic properties were obtained when the nitrogen in the nitrogen-argon gas mixture during sputtering was in the range 0-10%. The resistivity of these films was low and x-ray diffraction results indicated only an fcc structure of γ-NiFe alloy. For films deposited with more than 10% of nitrogen in the gas mixture there is a transition region where resistivity and coercivity started to increase. Films deposited with 20% nitrogen mixed with argon consist of a mixture of γ-NiFe alloy and (Ni,Fe)4N phases. With further increase of nitrogen above 30% during sputtering, a (Ni,Fe)3N phase was observed. The resistivity and coercivity of these films were high.
K.K. Shih, M.E. Re, et al.
Applied Physics Letters
M. Mirzamaani, M.E. Re, et al.
IEEE Transactions on Magnetics
K.K. Shih, D.B. Dove
IBM J. Res. Dev
T. Takamori, J.J. Boland
Journal of Materials Science Letters