Paul B. Comita, Peter E. Price Jr., et al.
Applied Physics Letters
Photochemical laser-induced deposition of silicon dioxide thin films is reported with excimer laser radiation at 248 nm. A deposition rate of 0.25 A/pulse was obtained at room temperature. The deposited films were characterized by scanning electron microscopy, x-ray photoelectron spectroscopy, ellipsometry and optical microscopy. The films exhibited excellent properties (n=1.47, k=0.05) derived from ellipsometry data. The deposition required no oxidizing coreactant.© 1995 American Institute of Physics.
Paul B. Comita, Peter E. Price Jr., et al.
Applied Physics Letters
Toivo T. Kodas, Paul B. Comita
Accounts of Chemical Research
Paul B. Comita, Toivo T. Kodas
Journal of Applied Physics
Toivo T. Kodas, Thomas H. Baum, et al.
Journal of Applied Physics