Michiel Sprik
Journal of Physics Condensed Matter
We report experimental evidence for the existence of three-dimensionally (3D) -confined biexcitons in a strain-relaxed (Formula presented)(Formula presented) layer grown on a stepwise graded buffer on Si(001) by ultrahigh vacuum chemical vapor deposition. A calculation of the photoluminescence line shape based on a simple model is found to be in good agreement with experiment. From this theoretical fit we deduce a binding energy of 1.55 meV for the 3D-confined biexcitons. This binding energy is larger than the reported value of 1.36 meV for a free biexciton in Si, indicating a quantum-confinement effect. © 1997 The American Physical Society.
Michiel Sprik
Journal of Physics Condensed Matter
Mark W. Dowley
Solid State Communications
Peter J. Price
Surface Science
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry